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Infineon Technologies IPB230N06L3 G
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IPB230N06L3 G
Manufacturers: Infineon Technologies
Qty: 656
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Description: MOSFET N-Channel MOSFET 20-200V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:200 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:30 A
Rds On - Drain-Source Resistance:23 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:36 W
Mounting Style:
Package / Case:TO-263-3
Packaging:Reel
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